SUBNANOSECOND HIGH-POWER PERFORMANCE OF A BISTABLE OPTICALLY CONTROLLED GAAS SWITCH

被引：0
|
作者：
STOUDT, DC [1 ]
BRINKMANN, RP [1 ]
ROUSH, RA [1 ]
机构：
[1] SIEMENS AG,MUNICH,GERMANY
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent subnanosecond results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented, The processes of persistent photoconductivity followed by photo-quenching; have been demonstrated in copper-compensated, silicon-doped, semi-insulating (GaAs:Si:Cu). These processes allow a switch to be developed that can be closed by the application of one laser pulse (lambda = 1.06 mu m) and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. This report discusses the effects of 1-MeV neutron irradiation on the BOSS material for the purpose of recombination center generation.
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页码：325 / 330
页数：6
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