GROWTH OF SINGLE-CRYSTAL ALUMINUM FILMS ON SILICON SUBSTRATES BY DC MAGNETRON SPUTTERING

Single-crystal Al(110) films were deposited on Si(100) substrates 4 degrees off toward [011BAR] and single crystal Al(111) films were deposited on Si(111) substrates 3 degrees off toward the nearest [110] by DC magnetron sputtering deposition. In the formation of single-crystal aluminum films, both the buffered HF solution cleaning procedure for removing the SiO2 layers on the silicon substrates and the offset angle of the silicon wafers are indispensable. Without buffered HF solution cleaning, polycrystal Al(111) films were deposited. Without the offset angle, a bicrystal Al(110) preferred-orientation structure was deposited. Optical reflectance, scanning electron microscopy and X-ray diffraction were used to evaluate the film properties.