MODELING 2-DIMENSIONAL EFFECTS ON BASE AND COLLECTOR CURRENTS IN NARROW-EMITTER SELF-ALIGNED BIPOLAR-TRANSISTORS

被引：1

作者：

RINALDI, N

机构：

[1] Department of Electronic Engineering, the University of Naples, 80125 Naples, via Claudio

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 03期

关键词：

D O I：

10.1016/0038-1101(93)90093-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A recent 2-D analytical model is extended to include the case of overlapping extrinsic-base and emitter diffusions in self-aligned bipolar transistors. The results of the model show, in good agreement with numerical simulations, that a significant component of the base current may be due to electron recombination at the base contact. Closed-form expressions for the electron current recombining at the base contact and for the sidewall collector current are presented. Furthermore, the dependence of the base and collector currents on emitter width, spacing and contact recombination velocities is studied in detail.

引用

页码：397 / 405

页数：9

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