INVESTIGATION OF EFFECT OF 2-BAND MODEL OF BARRIER ON TUNNELLING CHARACTERISTICS OF DEGENERATE MIS DIODES

被引：7
|
作者：
TEMPLE, VAK [1 ]
SHEWCHUN, J [1 ]
机构：
[1] MCMASTER UNIV,INST MAT RES,HAMILTON,ONTARIO,CANADA
来源：
SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 05期
关键词：
D O I：
10.1016/0038-1101(74)90070-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：417 / 426
页数：10
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