INVESTIGATION OF EFFECT OF 2-BAND MODEL OF BARRIER ON TUNNELLING CHARACTERISTICS OF DEGENERATE MIS DIODES

被引：7

作者：

TEMPLE, VAK ^{[1
]}

SHEWCHUN, J ^{[1
]}

机构：

[1] MCMASTER UNIV,INST MAT RES,HAMILTON,ONTARIO,CANADA

来源：

关键词：

D O I：

10.1016/0038-1101(74)90070-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：417 / 426

页数：10

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