INDIUM ARSENIDE TUNNEL DIODES

被引：5

作者：

KLEINKNECHT, HP

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(61)90030-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：133 / &

共 50 条

[1] GALLIUM ARSENIDE TUNNEL DIODES
HAMBLETON, KG
LOW, JJ
SHERWELL, RJ
NATURE, 1960, 185 (4714) : 676 - 677
[2] GALLIUM ARSENIDE TUNNEL DIODES
HOLONYAK, N
LESK, IA
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (08): : 1405 - 1409
[3] TUNNEL SPECTROSCOPY OF PHONONS IN INDIUM ARSENIDE
KOVCHAVTSEV, AP
KURYSHEV, GL
POSTNIKOV, KO
BIRYUKOV, SA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (12): : 1348 - 1348
[4] INDIUM ANTIMONIDE TUNNEL DIODES
MUKAI, H
IRITA, Y
REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1967, 15 (1-2): : 37 - &
[5] SPONTANEOUS RECOMBINATION RADIATION OF INDIUM ARSENIDE DIODES
GALKINA, TI
PENIN, NA
RASSUSHI.VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 182 - &
[6] GALLIUM INDIUM ARSENIDE PHOTO-DIODES
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SOLID-STATE ELECTRONICS, 1979, 22 (03) : 327 - 333
[7] EXCESS CURRENT IN GALLIUM ARSENIDE TUNNEL DIODES
NANAVATI, RP
DEANDRADE, CA
PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 869 - &
[8] COMMENTS ON EXCESS CURRENT IN GALLIUM - ARSENIDE TUNNEL DIODES
GOLD, RD
NANAVATI, RP
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (05): : 486 - &
[9] EXCESS AND THERMAL CURRENTS IN GALLIUM ARSENIDE TUNNEL DIODES
AMERICO, C
DEANDRADE, M
SOLID-STATE ELECTRONICS, 1966, 9 (09) : 901 - &
[10] TUNNEL EFFECT IN GALLIUM ARSENIDE DIODES AT LOW TEMPERATURES
VUL, BM
ZAVARITS.EI
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SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (03): : 710 - +