MODEL ON THE MECHANISM OF ROOM-TEMPERATURE INTERFACIAL REACTION IN VARIOUS METAL-SEMICONDUCTOR COUPLES

被引：0
|
作者：
HIRAKI, A [1 ]
OKIJI, A [1 ]
机构：
[1] OSAKA UNIV,FAC ENGN,SUITA,OSAKA 565,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C344 / C344
页数：1
相关论文
共 50 条
  • [41] Room-temperature magnetoresistance of nanocrystalline Ni metal with various grain sizes
    Isnaini, V. A.
    Kolonits, T.
    Czigany, Zs.
    Gubicza, J.
    Zsurzsa, S.
    Varga, L. K.
    Toth-Kadar, E.
    Pogany, L.
    Peter, L.
    Bakonyi, I.
    EUROPEAN PHYSICAL JOURNAL PLUS, 2020, 135 (01):
  • [42] XPS STUDY ON OXIDE GASB INTERFACIAL CHEMICAL-REACTION AT ROOM-TEMPERATURE
    MIZOKAWA, Y
    KOMODA, O
    IWASAKI, H
    NAKAMURA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (05): : L257 - L259
  • [43] Numerical model for metal-semiconductor contact
    Asanov, E.E.
    Zuyev, S.A.
    Kilessa, G.V.
    Slipchenko, N.I.
    Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 2013, 72 (17): : 1575 - 1587
  • [44] Kinetic mechanism of metal-semiconductor interface formation
    Poverkhnost Fiz Khim Mekh, 3 (36-45):
  • [45] MECHANISM FOR REACTIVE CHEMISTRY AT METAL-SEMICONDUCTOR INTERFACES
    BUTERA, RA
    HOLLINGSWORTH, CA
    PHYSICAL REVIEW B, 1988, 37 (18): : 10487 - 10495
  • [46] Kinetic mechanism of the formation of a metal-semiconductor interface
    Plyusnin, N.I.
    Milenin, A.P.
    Surface Investigation X-Ray, Synchrotron and Neutron Techniques, 1998, 13 (03): : 327 - 337
  • [47] A MICROSCOPIC MODEL OF METAL-SEMICONDUCTOR CONTACTS
    DUKE, CB
    MAILHIOT, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1170 - 1177
  • [48] ROOM-TEMPERATURE FORMATION AND STABILITY OF COMPOUNDS IN METAL COUPLES OF BULK-FILM TYPE
    SIMIC, V
    MARINKOVIC, Z
    THIN SOLID FILMS, 1994, 249 (02) : 168 - 173
  • [49] The Model for Linear Magnetoresistance of Two-Dimensional Metal-Semiconductor Composites with Interfacial Shells
    徐洁
    王国栋
    李山东
    李强
    高小洋
    Chinese Physics Letters, 2015, (09) : 127 - 131
  • [50] The Model for Linear Magnetoresistance of Two-Dimensional Metal-Semiconductor Composites with Interfacial Shells
    Xu Jie
    Wang Guo-Dong
    Li Shan-Dong
    Li Qiang
    Gao Xiao-Yang
    CHINESE PHYSICS LETTERS, 2015, 32 (09)
12345