STRUCTURAL DISORDER MODEL FOR AMORPHOUS-SEMICONDUCTORS - A-SE

被引：1

作者：

VAID, BA ^{[1
]}

SHARMA, KC ^{[1
]}

机构：

[1] UNIV GUELPH,DEPT PHYS,GUELPH N1G 2W1,ONTARIO,CANADA

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1986年 / 137卷 / 02期

关键词：

D O I：

10.1002/pssb.2221370203

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：433 / 440

页数：8

共 50 条

[41] LUMINESCENCE IN AMORPHOUS-SEMICONDUCTORS
STREET, RA
ADVANCES IN PHYSICS, 1976, 25 (04) : 397 - 453
[42] DOPED AMORPHOUS-SEMICONDUCTORS
SPEAR, WE
ADVANCES IN PHYSICS, 1977, 26 (06) : 811 - 845
[43] USE OF GRAPHICS TO STUDY STRUCTURAL MODELS OF AMORPHOUS-SEMICONDUCTORS
WINER, K
WOOTEN, F
JOURNAL OF MOLECULAR GRAPHICS & MODELLING, 1985, 3 (03): : 76 - +
[44] CHARGE-INDUCED STRUCTURAL RELAXATION IN AMORPHOUS-SEMICONDUCTORS
MULLER, G
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (02): : 465 - 475
[45] CORRELATED DISORDER IN 2-BAND MODELS FOR AMORPHOUS-SEMICONDUCTORS
MONTGOMERY, CG
PHYSICAL REVIEW B, 1985, 31 (10): : 6525 - 6530
[46] EFFECTS OF TOPOLOGY VERSUS DISORDER ON VIBRATIONAL PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
SEN, PN
YNDURAIN, F
PHYSICAL REVIEW B, 1977, 15 (10): : 5076 - 5077
[47] NEW MODEL FOR THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
JOHNSTON, R
KRAMER, B
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 59 - 62
[48] MODEL FOR PHENOMENON OF PHOTODOPING OF SOME AMORPHOUS-SEMICONDUCTORS WITH SILVER
SALIK, J
JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 501 - 501
[49] LIGHT-INDUCED STRUCTURAL-CHANGES IN AMORPHOUS-SEMICONDUCTORS
ABDULHALIM, I
BESERMAN, R
KHAIT, YL
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 387 - 390
[50] RANDOM STACKING MODEL FOR TETRAHEDRALLY COORDINATED AMORPHOUS-SEMICONDUCTORS
YONEZAWA, F
BIRMAN, JL
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (11): : L277 - L283

← 1 2 3 4 5 →