AMORPHOUS VISIBLE-LIGHT THIN-FILM LIGHT-EMITTING DIODE HAVING A-SIN-H AS A LUMINESCENT LAYER

被引：28
|
作者：
BOONKOSUM, W
KRUANGAM, D
PANYAKEOW, S
机构：
[1] Semiconductor Device Research Laboratory, Department of Electrical Engineering Chulalongkorn University, Bangkok
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 04期
关键词：
HYDROGENATED AMORPHOUS SILICON NITRIDE; HYDROGENATED AMORPHOUS SILICON CARBIDE; THIN FILM LED; INJECTION ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; LED;
D O I：
10.1143/JJAP.32.1534
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hydrogenated amorphous silicon nitride (a-SiN:H) has been applied for the first time as a luminescent active layer (i-layer) in an amorphous visible-light thin film light-emitting diode (TFLED). The TFLED has the structure of glass substrate/ITO/p a-SiC:H/i a-SiN:H/n a-SiC:H/Al. Visible red and yellow emissions can be observed at room temperature from the TFLEDs in which the optical energy gap of i-a-SiN:H is larger than 2.4 eV. The brightness of the red TFLED was 0.5 cd/m2, with a forward injection current density of 2000 mA/cm2 for the 0.033 cm2 cell area.
引用
收藏
页码：1534 / 1538
页数：5
相关论文
共 50 条
  • [21] HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTURE
    JEN, TS
    CHEN, JY
    SHIN, NF
    HONG, JW
    CHANG, CY
    ELECTRONICS LETTERS, 1993, 29 (08) : 707 - 708
  • [22] AMORPHOUS-SIC THIN-FILM P-I-N LIGHT-EMITTING DIODE USING AMORPHOUS-SIN HOT-CARRIER TUNNELING INJECTION LAYERS
    PAASCHE, SM
    TOYAMA, T
    OKAMOTO, H
    HAMAKAWA, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) : 2895 - 2902
  • [23] Directional Polarized Light Emission from Thin-Film Light-Emitting Diodes
    Fu, Xiangyu
    Mehta, Yash
    Chen, Yi-An
    Lei, Lei
    Zhu, Liping
    Barange, Nilesh
    Dong, Qi
    Yin, Shichen
    Mendes, Juliana
    He, Siliang
    Gogusetti, Renuka
    Chang, Chih-Hao
    So, Franky
    ADVANCED MATERIALS, 2021, 33 (09)
  • [24] InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors
    Lee, Ju-Hyeon
    Park, Jung-Min
    Park, Yu Jung
    Seo, Jung Hwa
    Kim, Han-Ki
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (29) : 35149 - 35160
  • [25] Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
    Wong, WS
    Sands, T
    Cheung, NW
    Kneissl, M
    Bour, DP
    Mei, P
    Romano, LT
    Johnson, NM
    APPLIED PHYSICS LETTERS, 1999, 75 (10) : 1360 - 1362
  • [26] Outsmarting waveguide losses in thin-film light-emitting diodes
    Meerholz, K
    Müller, DC
    ADVANCED FUNCTIONAL MATERIALS, 2001, 11 (04) : 251 - 253
  • [27] Light-emitting thin-film field-effect transistors
    Stallinga, Peter
    Gomes, Henrique L.
    OPTICA APPLICATA, 2006, 36 (2-3) : 373 - 380
  • [28] Outsmarting waveguide losses in thin-film light-emitting diodes
    Meerholz, Klaus
    Müller, David C.
    Advanced Funtional Materials, 2001, 11 (04): : 251 - 253
  • [29] Integrated photonics chip with InGaN/GaN light-emitting diode and bended waveguide for visible-light communications
    Li, Xin
    Jiang, Yan
    Li, Jie
    Shi, Zheng
    Zhu, Gangyi
    Wang, Yongjin
    OPTICS AND LASER TECHNOLOGY, 2019, 114 : 103 - 109
  • [30] Hydrogenated amorphous silicon carbide alternating-current thin-film light-emitting diodes
    Yeh, Rong-Hwei
    Chen, Ginn-Horng
    Lo, Shih-Yung
    Hong, Jyh-Wong
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (08) : H687 - H690
12345