DEEP LEVELS IN GA1-XALXAS UNDER PRESSURE

被引：37
|
作者：
SAXENA, AK
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 01期
关键词：
D O I：
10.1063/1.91281
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：79 / 81
页数：3
相关论文
共 50 条
  • [31] ELECTRON-MOBILITY IN GA1-XALXAS ALLOYS
    SAXENA, AK
    PHYSICAL REVIEW B, 1981, 24 (06): : 3295 - 3302
  • [32] MULTIBARRIER TUNNELING IN GA1-XALXAS/GAAS HETEROSTRUCTURES
    VASSELL, MO
    LEE, J
    LOCKWOOD, HF
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5206 - 5213
  • [33] TE AND GE DOPING STUDIES IN GA1-XALXAS
    SPRINGTH.AJ
    KING, FD
    JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 862 - 862
  • [34] A GA1-XALXAS MONOLITHIC OPTO-ISOLATOR
    ROEDEL, RJ
    DUTT, BV
    ELHAMAMSY, M
    KERAMIDAS, VG
    SAUL, RH
    CASSIDAY, DR
    ELECTRON DEVICE LETTERS, 1980, 1 (02): : 15 - 17
  • [35] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS
    AFROMOWITZ, MA
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1292 - 1294
  • [36] DAMPING OF OPTICAL PHONONS IN GA1-XALXAS ALLOYS
    JUSSERAND, B
    MOLLOT, F
    QUAGLIANO, LG
    LEROUX, G
    PLANEL, R
    PHYSICAL REVIEW LETTERS, 1991, 67 (20) : 2803 - 2806
  • [37] NUCLEATION AND GROWTH OF GA1-XALXAS ON (111)GAP
    ASTLES, MG
    ROWLAND, MC
    JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 142 - 147
  • [38] RELIABILITY OF GA1-XALXAS INJECTION-LASERS
    GOODWIN, AR
    HENSHALL, GD
    SELWAY, PR
    OHARA, S
    NEWMAN, D
    DOBSON, P
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 437 - 437
  • [39] CATHODOLUMINESCENCE INVESTIGATION OF GA1-XALXAS AT CRYOGENIC TEMPERATURES
    ROEDEL, RJ
    MYHAJLENKO, S
    EDWARDS, JL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) : 1186 - 1190
  • [40] EXCITED-STATES OF DX IN GA1-XALXAS
    VONBARDELEBEN, HJ
    BOURGOIN, JC
    DELERUE, C
    LANNOO, M
    PHYSICAL REVIEW B, 1991, 44 (16): : 9060 - 9063
12345