MEASUREMENT OF HOLE VELOCITY IN N-TYPE INGAAS

被引:65
|
作者
HILL, P
SCHLAFER, J
POWAZINIK, W
URBAN, M
EICHEN, E
OLSHANSKY, R
机构
关键词
D O I
10.1063/1.97877
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1260 / 1262
页数:3
相关论文
共 50 条
  • [1] MEASUREMENT OF HOLE DIFFUSION IN N-TYPE GERMANIUM
    GOUCHER, FS
    [J]. PHYSICAL REVIEW, 1951, 81 (03): : 475 - 475
  • [2] MEASUREMENT OF HOLE MOBILITY IN HEAVILY DOPED N-TYPE SILICON
    SWIRHUN, SE
    DELALAMO, JA
    SWANSON, RM
    [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 168 - 173
  • [3] N-type Doping Strategies for InGaAs
    Aldridge, Henry, Jr.
    Lind, Aaron G.
    Bomberger, Cory C.
    Puzyrev, Yevgeniy
    Zide, Joshua M. O.
    Pantelides, Sokrates T.
    Law, Mark E.
    Jones, Kevin S.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 62 : 171 - 179
  • [4] MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE INP
    GLOVER, GH
    [J]. APPLIED PHYSICS LETTERS, 1972, 20 (06) : 224 - &
  • [5] MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTICS IN N-TYPE GALLIUM ARSENIDE
    INOUE, M
    SHIRAFUJI, J
    INUISHI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (10) : 1378 - +
  • [6] N-type doping strategies for InGaAs (Withdrawn Publication)
    Aldridge, Henry, Jr.
    Lind, Aaron G.
    Bomberger, Cory C.
    Puzyrev, Yevgeniy
    Zide, Joshua M. O.
    Pantelides, Sokrates T.
    Law, Mark E.
    Jones, Kevin S.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 57 : 39 - 47
  • [7] COMPARISON OF MICROWAVE VELOCITY/FIELD CHARACTERISTICS OF N-TYPE INP AND N-TYPE GAAS
    LAM, HT
    ACKET, GA
    [J]. ELECTRONICS LETTERS, 1971, 7 (24) : 722 - +
  • [8] HOLE DIFFUSION LENGTH MEASUREMENT FOR N-TYPE SEMICONDUCTORS BY USING PHOTOELECTROCHEMICAL ETCHING TECHNIQUE
    YAMAMOTO, A
    OKADA, H
    IKEJIRI, T
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (07) : 2022 - 2026
  • [9] INTERACTION OF HOLE TRAPPING AND TRANSIT EFFECTS IN THE TEMPORAL RESPONSE OF INP/INGAAS P-TYPE INSULATOR N-TYPE PHOTODIODES
    JOHNSON, BC
    CAMPBELL, JC
    DENTAI, AG
    JOYNER, CH
    QUA, GJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (10) : 5343 - 5347
  • [10] Temperature dependence of galvanomagnetic properties of undoped n-type GaAs/GaAs and n-type InGaAs/InP layers
    Wolkenberg, A.
    PrzesLawski, T.
    Regiński, K.
    Kaniewski, J.
    [J]. Electron Technology, 2002, 34