EFFECT OF HEAT-TREATMENT ON AL-GAAS SCHOTTKY BARRIERS

被引：7
|
作者：
WADA, O [1 ]
YANAGISAWA, S [1 ]
TAKANASHI, H [1 ]
机构：
[1] FUJITSU LABS LTD, NAKAHARA, KAWASAKI, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 11期
关键词：
D O I：
10.1143/JJAP.12.1814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1814 / 1815
页数：2
相关论文
共 50 条
  • [41] HEAT-TREATMENT EFFECTS ON AN IN-GAAS OHMIC CONTACT
    OTSUKI, T
    AOKI, H
    TAKAGI, H
    KANO, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (06) : 2011 - 2014
  • [42] DEVIATION FROM STOICHIOMETRY IN GAAS DURING HEAT-TREATMENT
    GRINSHTEIN, PM
    FISTUL, VI
    [J]. INORGANIC MATERIALS, 1976, 12 (01) : 91 - 92
  • [43] ATOM-PROBE STUDY OF AL-GAAS INTERFACES
    NISHIKAWA, O
    KANEDA, O
    SHIBATA, M
    NOMURA, E
    [J]. JOURNAL DE PHYSIQUE, 1984, 45 (NC9): : 459 - 464
  • [44] MODIFICATION OF AL/GAAS(001) SCHOTTKY BARRIERS BY MEANS OF HETEROVALENT INTERFACE LAYERS
    CANTILE, M
    SORBA, L
    FARACI, P
    YILDIRIM, S
    BIASIOL, G
    BRATINA, G
    FRANCIOSI, A
    MILLER, TJ
    NATHAN, MI
    TAPFER, L
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2653 - 2659
  • [45] AL/SI/ALGAAS/GAAS SCHOTTKY BARRIERS BY MOLECULAR-BEAM EPITAXY
    MILLER, TJ
    NATHAN, MI
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (19) : 2332 - 2334
  • [46] Thermal stability of engineered Schottky barriers in Al/Si/GaAs(001) diodes
    Sorba, L
    Yildirim, S
    Lazzarino, M
    Franciosi, A
    Chiola, D
    Beltram, F
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (13) : 1927 - 1929
  • [47] ON THE ATOMIC-STRUCTURE OF THE AL-GAAS(100) INTERFACE
    KIELY, CJ
    CHERNS, D
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 59 (01): : 1 - 29
  • [48] Magnetite Schottky barriers on GaAs substrates
    Watts, SM
    Boothman, C
    van Dijken, S
    Coey, JMD
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (21) : 1 - 3
  • [49] BAND BENDING ON MBE AL-GAAS(001) AS STUDIED BY ARUPS
    SVENSSON, SP
    KANSKI, J
    ANDERSSON, TG
    NILSSON, PO
    [J]. SURFACE SCIENCE, 1983, 124 (2-3) : L31 - L34
  • [50] INTERFACE STATES GENERATED BY HEAT-TREATMENT IN AU/INGAP SCHOTTKY DIODES
    CHAE, HJ
    KIM, CH
    KWON, SD
    LEE, JB
    CHOE, BD
    LIM, H
    LEE, HJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) : 3589 - 3592
12345