EFFECT OF HEAT-TREATMENT ON AL-GAAS SCHOTTKY BARRIERS

被引：7

作者：

WADA, O ^{[1
]}

YANAGISAWA, S ^{[1
]}

TAKANASHI, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD, NAKAHARA, KAWASAKI, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 11期

关键词：

D O I：

10.1143/JJAP.12.1814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1814 / 1815

页数：2

共 50 条

[1] INFLUENCE OF INTERFACE COMPOSITION ON AL-GAAS SCHOTTKY BARRIERS
SCHWARTZ, GP
GUALTIERI, GJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 674 - 679
[2] CHARACTERIZATION OF THE INTERFACE STATES AT AL-GAAS SCHOTTKY BARRIERS WITH A THIN INTERFACE LAYER
MORANTE, JR
LOUSA, A
CARCELLER, JE
MORENZA, JL
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 537 - 538
[3] CHARACTERIZATION OF THE INTERFACE STATES AT AL-GAAS SCHOTTKY BARRIERS WITH A THIN INTERFACE LAYER - REPLY
MORANTE, JR
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (12) : 1157 - 1157
[4] EFFECT OF HEAT-TREATMENT ON PALLADIUM AMORPHOUS-SILICON SCHOTTKY BARRIERS
PIETRUSZKO, SM
NARASIMHAN, KL
GUHA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 801 - 803
[5] AL-GAAS (001) SCHOTTKY-BARRIER FORMATION
SVENSSON, SP
LANDGREN, G
ANDERSSON, TG
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4474 - 4481
[6] THERMAL-STABILITY OF EPITAXIAL AL-GAAS SCHOTTKY BARRIERS PREPARED BY MOLECULAR-BEAM EPITAXY
MISSOUS, M
RHODERICK, EH
SINGER, KE
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3189 - 3195
[7] RICHARDSON CONSTANT OF AL-GAAS AND AU-GAAS SCHOTTKY-BARRIER DIODES
BORREGO, JM
GUTMANN, RJ
ASHOK, S
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (03) : 169 - 172
[8] EFFECTS OF HEAT-TREATMENT ON NOISE SPECTRUM IN AU-INP SCHOTTKY BARRIERS
PERANSIN, JM
MESBAH, M
GROUBERT, E
[J]. ELECTRONICS LETTERS, 1981, 17 (20) : 757 - 758
[9] INVESTIGATION OF INTERFACE STATES IN MIS-TYPE AL-GAAS, AU-GAAS AND SN-GAAS SCHOTTKY BARRIERS WITH A THIN INTERFACIAL OXIDE LAYER
VANMEIRHAEGHE, RL
LAFLERE, WH
LI, YM
CARDON, F
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (08) : 1505 - 1512
[10] EFFECT OF HEAT-TREATMENT ON NATURE OF TRAPS IN EPITAXIAL GAAS
HASEGAWA, F
MAJERFELD, A
[J]. ELECTRONICS LETTERS, 1976, 12 (02) : 52 - 53

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