PHOTOLUMINESCENCE AND DIFFUSIVITY OF FREE-EXCITONS IN DOPED SILICON

被引：9

作者：

CHEN, YH ^{[1
]}

LYON, SA ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 05期

关键词：

D O I：

10.1109/3.27999

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1053 / 1055

页数：3

共 50 条

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