PHOTOLUMINESCENCE AND DIFFUSIVITY OF FREE-EXCITONS IN DOPED SILICON

被引：9
|
作者：
CHEN, YH [1 ]
LYON, SA [1 ]
机构：
[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 05期
关键词：
7;
D O I：
10.1109/3.27999
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1053 / 1055
页数：3
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