EFFECTS OF THIN SIO2 CAPPING LAYER ON SILICON-ON-INSULATOR FORMATION BY LATERAL SOLID-PHASE EPITAXY

被引：3
|
作者：
KUSUKAWA, K
OHKURA, M
MONIWA, M
MIYAO, M
机构：
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 01期
关键词：
D O I：
10.1063/1.107381
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of a SiO2 capping layer over an amorphous Si surface on the lateral solid-phase epitaxy of Si are investigated. A thin SiO2 layer (about 5 nm) chemically grown on the deposited amorphous layer reduces the lateral crystal growth length. In addition, observations using a transmission electron microscope reveal that crystal defects are formed during lateral growth at the interface of the surface SiO2 and the deposited amorphous Si layer. These crystal defects are thought to be responsible for the reduction in crystal growth.
引用
收藏
页码：80 / 81
页数：2
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