REACTIVE ION ETCHING USING ELECTRON-CYCLOTRON RESONANCE HYDROGEN PLASMA WITH N-BUTYL ACETATE REACTIVE GAS

Electron cyclotron resonance hydrogen plasma reactive ion etching (RIE) with n-butyl acetate reactive gas has been demonstrated. The etching mechanism is discussed for RIE of transparent conducting oxide films. The RIE technique exhibits excellent material selectivity resulting from the ability to control the etching mechanism by altering the accelerating voltage frequency. To demonstrate the practical application of RIE, an electroluminescent display fabrication is described.