REACTIVE ION ETCHING USING ELECTRON-CYCLOTRON RESONANCE HYDROGEN PLASMA WITH N-BUTYL ACETATE REACTIVE GAS

被引：4

作者：

MIYATA, T

MINAMI, T

SATO, H

TAKATA, S

机构：

[1] Electron Device System Laboratory, Kanazawa Institute of Technology, Oogigaoka Nonoichi, Ishikawa

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 03期

关键词：

REACTIVE ION ETCHING; ELECTRON CYCLOTRON RESONANCE; TRANSPARENT CONDUCTING FILMS; HYDROGEN PLASMA; NORMAL-BUTYL ACETATE; ELECTROLUMINESCENT DEVICE;

D O I：

10.1143/JJAP.31.932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron cyclotron resonance hydrogen plasma reactive ion etching (RIE) with n-butyl acetate reactive gas has been demonstrated. The etching mechanism is discussed for RIE of transparent conducting oxide films. The RIE technique exhibits excellent material selectivity resulting from the ability to control the etching mechanism by altering the accelerating voltage frequency. To demonstrate the practical application of RIE, an electroluminescent display fabrication is described.

引用

页码：932 / 937

页数：6

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