FIELD-EFFECT TRANSISTOR WITH FORWARD BIASED GATE-CHANNEL JUNCTION

被引：1

|

作者：

COBBOLD, RSC

TROFIMENKO, FN

机构：

来源：

PROCEEDINGS OF THE IEEE | 1964年 / 52卷 / 09期

关键词：

D O I：

10.1109/PROC.1964.3272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1073 / &

相关论文

共 50 条

[41] ANALYSIS OF AMPLIFICATION FACTOR VS CURRENT LAW FOR FIELD-EFFECT TRANSISTOR WITH FORWARD BIAS GATE
MATSON, EA
GALUZO, VE
[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1980, 25 (03): : 662 - 664
[42] Field emission current from a junction field-effect transistor
Monshipouri, Mahta
Abdi, Yaser
[J]. JOURNAL OF NANOPARTICLE RESEARCH, 2015, 17 (04)
[43] Field emission current from a junction field-effect transistor
Mahta Monshipouri
Yaser Abdi
[J]. Journal of Nanoparticle Research, 2015, 17
[44] INSULATED-GATE FIELD-EFFECT TRANSISTOR - BIPOLAR TRANSISTOR IN DISGUISE
JOHNSON, EO
[J]. RCA REVIEW, 1973, 34 (01): : 80 - 94
[45] NARROW GATE EFFECT ON DEPLETION MODE INSULATED GATE FIELD-EFFECT TRANSISTOR
HALDAR, S
KHANNA, MK
GUPTA, RS
[J]. SOLID-STATE ELECTRONICS, 1994, 37 (10) : 1717 - 1721
[46] A 30-nm-gate field-effect transistor
S. V. Obolenskii
M. A. Kitaev
[J]. Technical Physics Letters, 2000, 26 : 408 - 409
[47] The gate leakage current in graphene field-effect transistor
Mao, Ling-Feng
Li, Xijun
Wang, Zi-Ou
Wang, Jin-Yan
[J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (09) : 1047 - 1049
[48] A NEW POLYMER INSULATED GATE FIELD-EFFECT TRANSISTOR
AKTIK, M
SEGUI, Y
AI, B
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 5055 - 5057
[49] SUSPENDED GATE FIELD-EFFECT TRANSISTOR AS HYDROGEN SENSOR
CASSIDY, J
PONS, S
JANATA, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C110 - C110
[50] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR
HOFSTEIN, SR
HEIMAN, FP
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

← 1 2 3 4 5 →