CARBON DOPING AND GROWTH-RATE REDUCTION BY CCL4 DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF GAAS

被引：31

作者：

LEE, JS ^{[1
]}

KIM, I ^{[1
]}

CHOE, BD ^{[1
]}

JEONG, WG ^{[1
]}

机构：

[1] SUNGKYUNKWAN UNIV, DEPT MAT ENGN, SUWON 440746, SOUTH KOREA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.357219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical, structural, and optical properties of GaAs grown by metalorganic chemical-vapor deposition using CCl4 have been studied and the growth rate reduction by CCl4 under various growth conditions has been investigated. Hole concentrations ranging from 2X10(16) to 1.8x10(20) cm(-3) have been obtained by varying V/III ratio and growth temperature. From Hall, x-ray, and low-temperature photoluminescence measurements, a low compensation is ensured. A growth rate reduction up to 50% has been observed. The dependence of the growth rate reduction on the growth temperature, the V/III ratio, and the CCl4 mole fraction was investigated. It is believed that the growth rate reduction is caused not by etching of solid GaAs but by reduction of Ga species through the formation of GaCl in gas phase.

引用

页码：5079 / 5084

页数：6

共 50 条

[41] STEP ORDERING DURING FRACTIONAL-LAYER SUPERLATTICE GROWTH ON GAAS(001) VICINAL SURFACES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
SAITO, H
UWAI, K
TOKURA, Y
FUKUI, T
APPLIED PHYSICS LETTERS, 1993, 63 (01) : 72 - 74
[42] GROWTH OF INSB ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BIEFELD, RM
HEBNER, GA
JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) : 272 - 278
[43] HEAVY CARBON DOPING OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAAS USING CARBON-TETRACHLORIDE
CUNNINGHAM, BT
HAASE, MA
MCCOLLUM, MJ
BAKER, JE
STILLMAN, GE
APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1905 - 1907
[44] CARBON DOPING IN ALGAAS USING TRIMETHYLARSINE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION WITH A HIGH-SPEED ROTATING SUSCEPTOR
WATANABE, N
ITO, H
ISHIBASHI, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (4B): : L473 - L475
[45] A STUDY ON STRONG MEMORY EFFECTS FOR MG DOPING IN GAN METALORGANIC CHEMICAL-VAPOR-DEPOSITION
OHBA, Y
HATANO, A
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 214 - 218
[46] MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
WU, CC
CHANG, CY
CHEN, PA
CHEN, HD
LIN, KC
CHAN, SH
APPLIED PHYSICS LETTERS, 1994, 65 (10) : 1269 - 1271
[47] PHOTOLUMINESCENCE INVESTIGATION OF GAN FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON (100)GAAS
HONG, CH
PAVLIDIS, D
BROWN, SW
RAND, SC
JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) : 1705 - 1709
[48] DISLOCATION PROFILES IN HGCDTE(100) ON GAAS(100) GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
NISHINO, H
MURAKAMI, S
SAITO, T
NISHIJIMA, Y
TAKIGAWA, H
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (05) : 533 - 537
[49] MINORITY-CARRIER PROPERTIES OF GAAS ON SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
SOGA, T
JIMBO, T
UMENO, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A): : 1494 - 1498
[50] FORMATION OF INGAAS QUANTUM DOTS ON GAAS MULTI-ATOMIC STEPS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH
KITAMURA, M
NISHIOKA, M
OSHINOWO, J
ARAKAWA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8B): : 4376 - 4379

← 1 2 3 4 5 →