ABSORPTION-BAND SHAPE OF FREE-EXCITONS IN INDIRECT BAND-GAP SEMICONDUCTORS AT HIGH-EXCITATION DENSITY

被引：1
|
作者：
LELYAKOV, AV
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 93卷 / 02期
关键词：
D O I：
10.1002/pssb.2220930209
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：523 / 530
页数：8
相关论文
共 50 条
  • [21] Thermionic electron emission from narrow band-gap semiconductors under picosecond laser excitation
    Mao, SS
    Mao, XL
    Yoo, JH
    Greif, R
    Russo, RE
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (08) : 4462 - 4465
  • [22] Subpicosecond absorption spectroscopy of band-gap excitation and defect formation in alkali halide crystals
    Thoma, ED
    Yochum, HM
    Sheldon, PA
    Williams, RT
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 141 (1-4): : 552 - 554
  • [23] Subpicosecond absorption spectroscopy of band-gap excitation and defect formation in alkali halide crystals
    Thoma, E.D.
    Yochum, H.M.
    Sheldon, P.A.
    Williams, R.T.
    1998, Elsevier Sci B.V., Amsterdam, Netherlands (141) : 1 - 4
  • [24] MODULATION OF EXCITON ABSORPTION BY BELOW BAND-GAP EXCITATION - OPTICAL STARK-EFFECT
    VONLEHMEN, AC
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1986, 3 (13): : P86 - P87
  • [25] Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors
    Fitzer, N
    Kuligk, A
    Redmer, R
    Städele, M
    Goodnick, SM
    Schattke, W
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S206 - S208
  • [26] Optical properties of organic wide band-gap semiconductors under high pressure.
    Guha, S
    Graupner, W
    Yang, S
    Cai, Q
    Martin, CM
    Chandrasekhar, M
    Chandrasekhar, HR
    Glaser, R
    Leising, G
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 218 : U32 - U32
  • [27] DETERMINATION OF MINORITY-CARRIER LIFETIMES IN P-TYPE NARROW BAND-GAP SEMICONDUCTORS WITH 2-PHOTON ABSORPTION EXCITATION
    LOLOEE, MR
    SEILER, DG
    WARD, GB
    APPLIED PHYSICS LETTERS, 1988, 53 (22) : 2188 - 2190
  • [28] High density excitation effect of the indirect band luminescence in thallous halides
    Takiyama, K
    Nakahara, J
    Takenaka, H
    Kobayashi, K
    Fujita, T
    Fujii, A
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1996, 65 (01) : 307 - 311
  • [29] OPTICAL-ABSORPTION AND DENSITY OF STATES IN BAND-GAP OF HYDROGENATED A-SI FILMS
    ZHAO, S
    HUNKLINGER, S
    SOLAR ENERGY MATERIALS, 1982, 6 (02): : 233 - 240
  • [30] Transient saturation absorption spectroscopy excited near the band gap at high excitation carrier density in GaAs
    Wu, SJ
    Wang, DL
    Jiang, HB
    Yang, H
    Gong, QH
    Ji, YL
    Lu, W
    CHINESE PHYSICS, 2004, 13 (01): : 111 - 114
12345