NOVEL CMOS CURRENT SCHMITT TRIGGER

被引：16
|
作者：
WANG, Z
GUGGENBUHL, W
机构：
[1] ETH, Switzerland
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 24期
关键词：
Semiconductor Devices; MOS; -; Transistors; Field Effect;
D O I：
10.1049/el:19881034
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel CMOS current Schmitt trigger based on current mirrors is presented, using only seven MOS transistors. The significant feature of the circuit is that one threshold current is controlled by a bias current and the other by an MOS transistor dimension, depending on the circuit implementation. A design example and the simulation results are given.
引用
收藏
页码：1514 / 1516
页数：3
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