QUANTITATIVE DEFECT MODEL FOR PHOSPHORUS IN SILICON FROM 450-DEGREES-C TO 1200-DEGREES-C

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作者：

KENDALL, DL

CARPIO, R

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 11期

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O646 [电化学、电解、磁化学];

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081704 ;

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页码：C470 / C470

页数：1

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