AN INVESTIGATION OF MAGNESIUM IN INDIUM-PHOSPHIDE GROWN BY MOLECULAR-BEAM EPITAXY

被引:12
|
作者
CHENG, TS
AIRAKSINEN, VM
STANLEY, CR
机构
关键词
D O I
10.1063/1.342020
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:6662 / 6667
页数:6
相关论文
共 50 条
  • [41] AN INVESTIGATION OF MOLECULAR-BEAM EPITAXY INSITU GROWN AG/GAAS SCHOTTKY DIODES
    WANG, YH
    HOUNG, MP
    CHEN, FH
    SZE, PW
    HONG, M
    MANNAERTS, JP
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (09) : 911 - 915
  • [42] INVESTIGATION OF RIPPLE DEFECTS ON MOLECULAR-BEAM EPITAXY GROWN GAAS-LAYERS
    KADHIM, NJ
    MUKHERJEE, D
    MEHTA, M
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1993, 12 (09) : 623 - 625
  • [43] INVESTIGATION OF INAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS SUBSTRATES
    DVORYANKINA, GG
    DVORYANKIN, VF
    PETROV, AG
    KUDRYASHOV, AA
    POROTIKOV, AP
    VARAKSIN, GA
    KHUSID, LB
    INORGANIC MATERIALS, 1987, 23 (11) : 1569 - 1574
  • [44] INDIUM-PHOSPHIDE WHISKERS GROWN BY ION-BOMBARDMENT
    OKUYAMA, F
    KATO, J
    SURFACE SCIENCE, 1995, 338 (1-3) : L857 - L862
  • [45] LATERAL VARIATION OF INDIUM CONTENT IN INGAAS GROWN ON GAAS CHANNELED SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    WAKEJIMA, A
    INOUE, A
    KITADA, T
    TOMITA, N
    SHIMOMURA, S
    HIYAMIZU, S
    FUJII, M
    YAMAMOTO, T
    KOBAYASHI, K
    SANO, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1102 - 1105
  • [46] THE INFLUENCE OF THE INDIUM INCORPORATION RATE ON THE LASING WAVELENGTH OF INGAAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    MARIELLA, RP
    LEHEW, S
    GUTHREAU, W
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (11) : 7435 - 7439
  • [47] PHOTOLUMINESCENCE CHARACTERIZATION OF INDIUM-DOPED AND UNDOPED SILICON LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    HENRY, A
    NI, WX
    HASAN, MA
    HANSSON, GV
    MONEMAR, B
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (04) : 340 - 344
  • [48] METAL ORGANIC VAPOR-PHASE EPITAXY OF INDIUM-PHOSPHIDE
    BASS, SJ
    PICKERING, C
    YOUNG, ML
    JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 68 - 75
  • [49] PURE AND DOPED INDIUM-PHOSPHIDE BY VAPOR-PHASE EPITAXY
    CLARKE, RC
    TAYLOR, LL
    JOURNAL OF CRYSTAL GROWTH, 1978, 43 (04) : 473 - 479
  • [50] Photoluminescence studies of indium nitride films grown on oxide buffer by metalorganic molecular-beam epitaxy
    Lai, Fang-I
    Kuo, Shou-Yi
    Lin, Woei-Tyng
    Chen, Wei-Chun
    Hsiao, Chien-Nan
    Liu, Yu-Kai
    Shen, Ji-Lin
    JOURNAL OF CRYSTAL GROWTH, 2011, 320 (01) : 32 - 35