NATURE OF SMALL ETCH PITS IN TE-DOPED SINGLE-CRYSTALS OF GAAS

被引:0
|
作者
SHIFRIN, SS [1 ]
OSVENSKI.VB [1 ]
MILVIDSK.MG [1 ]
MORGULIS, LM [1 ]
GRISHINA, SP [1 ]
机构
[1] STATE SCI RES RARE MET IND INST, MOSCOW, USSR
来源
KRISTALLOGRAFIYA | 1973年 / 18卷 / 06期
关键词
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:1299 / 1302
页数:4
相关论文
共 50 条
  • [31] ON THE NATURE OF INHOMOGENEITY OF SINGLE-CRYSTALS OF SEMIISOLATING GAAS
    KARTAVYKH, AV
    YUROVA, ES
    BIBERIN, VI
    GRISHINA, SP
    MILVIDSKII, MG
    OSVENSKII, VB
    YURYEVA, IM
    KRISTALLOGRAFIYA, 1990, 35 (04): : 945 - 952
  • [32] ETCH PITS IN SILICON SINGLE CRYSTALS
    MATUKURA, Y
    SUZUKI, T
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1957, 12 (08) : 976 - 976
  • [33] DETECTION OF ETCH PITS IN SINGLE-CRYSTALS OF METALS BY X-RAY TOPOGRAPHY
    ESIN, VO
    TAGIROVA, DM
    NASYROV, RS
    RUSSIAN METALLURGY, 1981, (04): : 158 - 161
  • [34] RELATION OF ETCH PITS TO THE DEFECT STRUCTURE OF LINBO3 SINGLE-CRYSTALS
    SERGEEV, VP
    BUDOVSKIKH, EA
    ZUEV, LB
    GOLDENBERG, GI
    KRISTALLOGRAFIYA, 1986, 31 (03): : 612 - 614
  • [35] ETCH PITS OF SB SINGLE CRYSTALS
    SHIGETA, J
    HIRAMATSU, M
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (11) : 1404 - 1404
  • [36] MORPHOLOGY OF ETCH PITS AND THEIR CORRELATION WITH SUBSTRUCTURE IN HIGHLY PURE ALUMINUM SINGLE-CRYSTALS
    URCOLAGALARZA, JJ
    FUENTESPEREZ, M
    ANALES DE FISICA, 1977, 73 (01): : 21 - 26
  • [37] COMPLEXING AT THE GAS EPITAXY OF TE-DOPED GAAS
    BOBROVNIKOVA, IA
    LAVRENTYEVA, LG
    TOROPOV, SY
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1985, 28 (02): : 96 - 100
  • [38] Rectifying characteristics of Te-doped GaAs nanowires
    Salehzadeh, O.
    Chen, M. X.
    Kavanagh, K. L.
    Watkins, S. P.
    APPLIED PHYSICS LETTERS, 2011, 99 (18)
  • [39] COMPLEXING AT THE GAS EPITAXY OF TE-DOPED GAAS
    BOBROVNIKOVA, IA
    LAVRENTYEVA, LG
    TOROPOV, SY
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1986, 29 (10): : 118 - 119
  • [40] ANNEALING OF NATIVE DEFECTS IN TE-DOPED GAAS
    SENGUPTA, A
    BHATNAGAR, AK
    GOPINATHAN, KP
    SUNDAR, CS
    SOLID STATE COMMUNICATIONS, 1993, 88 (06) : 471 - 473