ANALYTICAL EXPRESSIONS FOR SUBTHRESHOLD CHARGES AND CURRENTS IN THIN-FILM SOI MOSFETS

被引：5
|
作者：
MALLIKARJUN, C
BHAT, KN
机构：
[1] Department of Electrical Engineering Indian Institute of Technology
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 05期
关键词：
METAL-OXIDE-SEMICONDUCTOR STRUCTURES AND DEVICES; MODELING;
D O I：
10.1049/el:19910273
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Analytical expressions for the front and back channel charges and currents in thin-film SOI MOSFETs operating in the subthreshold region are presented, based on a charge sheet model. The analysis includes the charge coupling between the front and back gates and the effect of interface states.
引用
收藏
页码：431 / 433
页数：3
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