共 50 条
- [1] HIGH-TEMPERATURE DECOMPOSITION OF SIO2 AT THE SI/SIO2 INTERFACE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1024 - 1025
- [5] Influence of interfaces on crystal growth of Si in SiO2/a-Si/SiO2 layered structures JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (6B): : L734 - L736
- [6] Influence of interfaces on crystal growth of Si in SiO2/a-Si/SiO2 layered structures Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (06):
- [7] Evaluation of SiO2 films and SiO2/Si interfaces by graded etching JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2A): : 805 - 809
- [8] Evaluation of SiO2 films and SiO2/Si interfaces by graded etching Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (2 A): : 805 - 809
- [9] Si/SiO2 and SiC/SiO2 interfaces for MOSFETs -: Challenges and advances SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 935 - 948
- [10] Dynamic segregation of metallic impurities at SiO2/Si interfaces 18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII), 2013, 471