SI1-XGEX/SI QUANTUM-WELL INFRARED PHOTODETECTORS

被引：14

作者：

ROBBINS, DJ

STANAWAY, MB

LEONG, WY

GLASPER, JL

PICKERING, C

机构：

[1] Defence Research Agency, Malvern, WR14 3PS, Worcs, St Andrews Rd

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1995年 / 6卷 / 05期

关键词：

D O I：

10.1007/BF00125893

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

P-type Si1-xGex/Si quantum well infrared photodetectors for thermal imaging applications have been grown by low pressure vapour phase epitaxy for the first time. Good control of periodicity in these pseudomorphic multiple quantum well structures on Si substrates was demonstrated by real-time ellipsometry during growth and subsequently confirmed by transmission electron microscopy. The photoresponse spectrum was tuned in the 8-13 mu m waveband by varying the Ge fraction in the Si1-xGex quantum wells. Dark currents were reduced by doping only the centre regions of the quantum wells.

引用

页码：363 / 367

页数：5

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