HIGH-SPEED ELECTRON-BEAM ANNEALING OF ARSENIC AND GALLIUM IMPLANTED SILICON

被引：4
|
作者：
KLABES, R
GROTZSCHEL, R
VOELSKOW, M
PANZER, S
BARTSCH, H
机构：
[1] INST MANFRED VON ARDENNE,DRESDEN,GER DEM REP
[2] AKAD WISSENSCH DDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-402 HALLE,GER DEM REP
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 64卷 / 01期
关键词：
D O I：
10.1002/pssa.2210640164
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K73 / K75
页数：3
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