HIGH-SPEED ELECTRON-BEAM ANNEALING OF ARSENIC AND GALLIUM IMPLANTED SILICON

被引：4
|
作者：
KLABES, R
GROTZSCHEL, R
VOELSKOW, M
PANZER, S
BARTSCH, H
机构：
[1] INST MANFRED VON ARDENNE,DRESDEN,GER DEM REP
[2] AKAD WISSENSCH DDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-402 HALLE,GER DEM REP
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 64卷 / 01期
关键词：
D O I：
10.1002/pssa.2210640164
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K73 / K75
页数：3
相关论文
共 50 条
  • [1] TRANSIENT ELECTRON-BEAM ANNEALING OF ARSENIC IMPLANTED SILICON
    MAYDELLONDRUSZ, EA
    VACUUM, 1987, 37 (3-4) : 253 - 256
  • [2] HIGH-SPEED SCANNING ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON LAYERS
    SCHILLER, S
    PANZER, S
    KLABES, R
    THIN SOLID FILMS, 1980, 73 (01) : 221 - 226
  • [3] PULSED ELECTRON-BEAM ANNEALING OF HIGH-DOSE ARSENIC IMPLANTED SILICON
    TUROS, A
    GEERK, J
    APPLIED PHYSICS, 1980, 22 (04): : 385 - 388
  • [4] PULSED ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON
    YAMAMOTO, Y
    INADA, T
    SUGIYAMA, T
    TAMURA, S
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 276 - 283
  • [5] SCANNED ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON
    SMITH, HJ
    LIGEON, E
    BONTEMPS, A
    APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1036 - 1039
  • [6] SUBLIMATION AND DIFFUSION OF ARSENIC IMPLANTED INTO SILICON AT RAPID ELECTRON-BEAM ANNEALING
    GROTZSCHEL, R
    KAGADEY, VA
    LEBEDEVA, NI
    PROSKUROVSKY, DI
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 573 - 575
  • [7] SCANNING ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED AND BISMUTH-IMPLANTED SILICON
    BONTEMPS, A
    SMITH, HJ
    DANIELOU, R
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5258 - 5264
  • [8] PULSED ELECTRON-BEAM ANNEALING OF AS AND B IMPLANTED SILICON
    BARBIER, D
    CHEMISKY, G
    GROB, JJ
    LAUGIER, A
    SIFFERT, P
    STUCK, R
    JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 209 - 214
  • [9] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON
    MCMAHON, RA
    AHMED, H
    ELECTRONICS LETTERS, 1979, 15 (02) : 45 - 47
  • [10] ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE
    SHAH, NJ
    AHMED, H
    LEIGH, PA
    APPLIED PHYSICS LETTERS, 1981, 39 (04) : 322 - 324
12345