PHYSICAL-TECHNOLOGICAL MODEL OF A MOSFET THRESHOLD VOLTAGE

被引：0
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作者：
AFONIN, NN
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来源：
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA | 1991年 / 34卷 / 03期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：47 / 52
页数：6
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