ON THE INTERSUBBAND ABSORPTION-LINE WIDTH IN SEMICONDUCTOR QUANTUM-WELLS

被引：16
|
作者：
ZALUZNY, M
机构：
[1] Institute of Physics, M. Curie-Skłodowska University, 20-031 Lublin
来源：
SOLID STATE COMMUNICATIONS | 1992年 / 82卷 / 07期
关键词：
D O I：
10.1016/0038-1098(92)90233-Y
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The influence of the nonparabolicity of the ground subband induced by the exchange interaction on the intersubband absorption line shape of a doped GaAs/AlxGa1-xAs quantum well is discussed. The obtained results indicate that contrary to the Bandara's suggestion this non-parabolicity gives rather small contribution to the line width if the depolarization and exciton effects are taken into account. The similar situation takes place when nonparallelism of the subbands arises from the intrinsic nonparabolicity of the well material.
引用
收藏
页码：565 / 567
页数：3
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