METAL-SEMICONDUCTOR INTERFACES - MAGNETIC AND ELECTRONIC-PROPERTIES AND SCHOTTKY-BARRIER IN FEN/(ZNSE)M (001) SUPERLATTICES

被引:17
|
作者
CONTINENZA, A [1 ]
MASSIDDA, S [1 ]
FREEMAN, AJ [1 ]
机构
[1] NORTHWESTERN UNIV,DEPT PHYS & ASTRON,EVANSTON,IL 60208
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 05期
关键词
D O I
10.1103/PhysRevB.42.2904
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Results of a systematic local-density study of the electronic and magnetic properties of Fen/(ZnSe)m [namely, Fe1/(ZnSe)1, Fe3/(ZnSe)1, and Fe3/(ZnSe)2] superlattices are presented. The effects of varying Fe and semiconductor layer thicknesses on the magnetic and electronic properties of the superlattice are analyzed. In particular, we found that (i) the enhanced Fe magnetism that characterizes the Fe-monolayer superlattice is suppressed as the Fe thickness is increased; (ii) some charge is transferred from the Fe layers into the ZnSe region; (iii) the interface effects are rapidly screened in the inner Fe layers; and (iv) a significant role on the Fe magnetism is played by the geometrical site coordination. Finally, for the thickest superlattice, the Schottky-barrier height is estimated. © 1990 The American Physical Society.
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页码:2904 / 2913
页数:10
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