BULK GROWTH OF GALLIUM ANTIMONIDE CRYSTALS BY BRIDGMAN METHOD

被引：17
|
作者：
ROY, UN
BASU, S
机构：
[1] Materials Science Centre, Indian Institute of Technology, Kharagpur
来源：
BULLETIN OF MATERIALS SCIENCE | 1990年 / 13卷 / 1-2期
关键词：
Bridgman technique; crystal growth; gallium antimonide; III-V semiconductor; isoelectronic doping;
D O I：
10.1007/BF02744853
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Gallium antimonide crystals were grown by the vertical Bridgman technique. Effects of ampoule diameter and dopant impurities (Te, P and In) on growth were studied. Crystal stoichiometry and homogeneity were verified with electron-probe microanalysis. Impurity distribution was investigated by secondary ion mass spectrometry (SIMS) and electron probe micro analysis. Variations of etch pit density (EPD) along the length and the diameter were studied by image analysis method. Resistivity, mobility and carrier concentrations were measured along the length of the crystal. © 1990 The Indian Academy of Sciences.
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收藏
页码：27 / 32
页数：6
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