On the predominant disorder in the crystalline lattice of NiS2

In order to elucidate the predominant disorder in the crystalline lattice of NiS2, the mechanism of sulphidation of NiS has been studied using marker technique. Experiments have been carried out in the temperature range 823-923 K in sulphur vapors under pressure between 10(3)-10(4) Pa. It has been found that gold markers deposited on the surface of NiS substrate have been found after sulphidation in the interior of the NiS2 product layer, just in the middle of the thickness of it. These results have demonstrated that predominant defects in NiS2 disulphide occur in the cation sublattice.