POTENTIAL AND ELECTRON-DISTRIBUTION MODEL FOR THE BURIED-CHANNEL MOSFET

被引：21

|

作者：

VANDERTOL, MJ

CHAMBERLAIN, SG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 04期

关键词：

D O I：

10.1109/16.22473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：670 / 689

页数：20

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