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- [41] INVESTIGATION OF INTERACTION OF MILLIMETER AND SUBMILLIMETER RADIATION WITH HOT CARRIERS IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1353 - 1356
- [42] INVESTIGATION OF MILLIMETER AND SUBMILLIMETER RADIATION ABSORPTION IN N-TYPE INSB AT HELIUM TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (11): : 1373 - +
- [43] LOW-TEMPERATURE TRANSPORT PHENOMENA IN COMPENSATED N-TYPE INSB (REVIEW) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 1 - 15
- [44] INFLUENCE OF THE SURFACE CONDUCTION ON THE ELECTRICAL-PROPERTIES OF COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (10): : 1132 - 1135
- [45] PHOTOCONDUCTIVITY IN COMPENSATED N-INSB BY CYCLOTRON-RESONANCE FIZIKA TVERDOGO TELA, 1975, 17 (01): : 289 - 297
- [46] INFLUENCE OF THE SURFACE CONDUCTION ON THE ELECTRICAL PROPERTIES OF COMPENSATED N-TYPE InSb. 1978, 12 (10): : 1132 - 1135
- [47] NEGATIVE PHOTOCONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE GAAS AT LOW-TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (04): : 474 - 476
- [49] INVESTIGATION OF TEMPERATURE DEPENDENCE OF DETECTION PROPERTIES OF N-TYPE INSB IN MILLIMETER AND SUBMILLIMETER BANDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (08): : 968 - +
- [50] SUBMILLIMETER PHOTOCONDUCTIVITY OF N-TYPE GAAS FILMS IN 0.2-0.5 MM RANGE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (12): : 1527 - 1529