DIS - N-CHANNEL TACHISTOSCOPE ALGORITHM

被引：16
|
作者：
MEWHORT, DJK
机构：
来源：
BEHAVIOR RESEARCH METHODS & INSTRUMENTATION | 1978年 / 10卷 / 06期
关键词：
D O I：
10.3758/BF03205397
中图分类号：
B84 [心理学];
学科分类号：
04 ; 0402 ;
摘要：
引用
收藏
页码：756 / 760
页数：5
相关论文
共 50 条
  • [21] AN N-CHANNEL MOSFET WITH SCHOTTKY SOURCE AND DRAIN
    MOCHIZUKI, T
    WISE, KD
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (04) : 108 - 111
  • [22] VARIATIONAL EXPRESSIONS FOR N-CHANNEL COLLISION PARAMETERS
    MCHALE, JL
    THALER, RM
    PHYSICAL REVIEW, 1955, 98 (04): : 1189 - 1189
  • [23] APPLICATIONS OF THE OVERCOMPENSATED N-CHANNEL KONDO PROBLEM
    SACRAMENTO, PD
    SCHLOTTMANN, P
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (10) : 5806 - 5808
  • [24] OPERATION AND CHARACTERIZATION OF N-CHANNEL EPROM CELLS
    BARNES, JJ
    LINDEN, JL
    EDWARDS, JR
    SOLID-STATE ELECTRONICS, 1978, 21 (03) : 521 - +
  • [25] Analysis and design of vertical N-channel IGBT
    Kumar, A
    Khanna, VK
    ICSE'98: 1998 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1998, : 235 - 239
  • [26] Analysis and design of vertical n-channel IGBT
    Central Electronics Engineering, Research Inst, Rajasthan, India
    IEEE Int Conf Semocond Electron Proc ICSE, (235-239):
  • [27] N-channel parity-time symmetry
    Ozgun, Ege
    EPL, 2023, 144 (03)
  • [28] THE RESPONSE OF N-CHANNEL EPROMS TO RADIATION AND ANNEALING
    BHAVE, PS
    BHORASKAR, VN
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 103 (02): : 223 - 228
  • [29] SEGR and SEB in N-channel power MOSFETs
    Allenspach, M
    Dachs, C
    Johnson, GH
    Schrimpf, RD
    Lorfevre, E
    Palau, JM
    Brews, JR
    Galloway, KF
    Titus, JL
    Wheatley, CF
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (06) : 2927 - 2931
  • [30] Modification of acenes for n-channel OFET materials
    Lakshminarayana, Arun Naibi
    Ong, Albert
    Chi, Chunyan
    JOURNAL OF MATERIALS CHEMISTRY C, 2018, 6 (14) : 3551 - 3563
12345