INTERSTITIAL COMPOUNDS OF BORON

被引：67
|
作者：
MATKOVICH, V
机构：
来源：
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 1961年 / 83卷 / 08期
关键词：
D O I：
10.1021/ja01469a008
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：1804 / &
相关论文
共 50 条
  • [41] BORON METALLO-BORON COMPOUNDS AND BORANES
    KOSTER, R
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 1966, 5 (02) : 264 - &
  • [42] LARGE INTERSTITIAL LOOPS IN GRAPHITE CONTAINING BORON
    MAYER, RM
    BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (03): : 431 - &
  • [43] Studies of boron-interstitial clusters in Si
    Deák, P
    Gali, A
    Sólyom, A
    Ordejón, P
    Kamarás, K
    Battistig, G
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (29) : 4967 - 4977
  • [44] A molecular dynamics study of interstitial boron in diamond
    Hu, XJ
    Dai, YB
    Li, RB
    Shen, HS
    He, XC
    PHYSICA B-CONDENSED MATTER, 2003, 327 (01) : 39 - 42
  • [45] Local vibrational modes of interstitial boron-interstitial oxygen complex in silicon
    Murin, L. I.
    Lastovskii, S. B.
    Tolkacheva, E. A.
    Markevich, V. P.
    Peaker, A. R.
    Svensson, B. G.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (11): : 2850 - 2854
  • [46] Theoretical studies of interstitial boron defects in silicon
    Hakala, M.
    Puska, M.J.
    Nieminen, R.M.
    Physica B: Condensed Matter, 1999, 273 : 268 - 270
  • [47] Structure and diffusion of interstitial boron pairs in silicon
    Shishkin, MP
    De Souza, MM
    PHYSICAL REVIEW B, 2004, 69 (03)
  • [48] INTERSTITIAL DEFECTS INVOLVING BORON IN IRRADIATED SILICON
    LAITHWAITE, K
    NEWMAN, RC
    TOTTERDELL, DHJ
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (02): : 236 - 242
  • [49] BORON METALLO-BORON COMPOUNDS + BORANES - PROGRESS IN BORON CHEMISTRY
    ELLIS, RB
    AMERICAN SCIENTIST, 1966, 54 (01) : A124 - &
  • [50] Theoretical studies of interstitial boron defects in silicon
    Hakala, M
    Puska, MJ
    Nieminen, RM
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 268 - 270
12345