INTERSTITIAL COMPOUNDS OF BORON

被引:67
|
作者
MATKOVICH, V
机构
关键词
D O I
10.1021/ja01469a008
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:1804 / &
相关论文
共 50 条
  • [1] INTERSTITIAL DERIVATIVES OF BETA BORON
    GIESE, RF
    ECONOMY, J
    MATKOVIC.VI
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1965, 122 (1-2): : 144 - &
  • [2] INTERSTITIAL COMPOUNDS
    BENNETT, LH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 365 - 365
  • [3] Interstitial boron defects in Si
    Adey, J
    Goss, JP
    Jones, R
    Briddon, PR
    PHYSICA B-CONDENSED MATTER, 2003, 340 : 505 - 508
  • [4] INTERSTITIAL COMPOUNDS
    BENNETT, LH
    MCALISTER, AJ
    WATSON, RE
    PHYSICS TODAY, 1977, 30 (09) : 34 - &
  • [5] Identification of boron clusters and boron-interstitial clusters in silicon
    Adey, J
    Goss, JP
    Jones, R
    Briddon, PR
    PHYSICAL REVIEW B, 2003, 67 (24):
  • [6] DISCUSSION OF CHEMICAL BONDING IN INTERSTITIAL COMPOUNDS - PREPARATION AND PROPERTIES OF INTERSTITIAL COMPOUNDS
    GOLDSCHMIDT, HJ
    JOURNAL OF THE INSTITUTE OF METALS, 1969, 97 : 173 - +
  • [7] Chemistry of boron and physics of frustration in boron and boron compounds
    Ogitsu, Tadashi
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2017, 254
  • [8] Boron-Induced Interstitial Effects Drive Water Oxidation on Ordered Ir-B Compounds
    Chen, Ding
    Yu, Ruohan
    Zhao, Hongyu
    Jiao, Jixiang
    Mu, Xueqin
    Yu, Jun
    Mu, Shichun
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2024, 63 (35)
  • [9] IMPLANTED INTERSTITIAL BORON ATOMS IN SILICON
    NETANGE, B
    BARUCH, P
    CHERKI, M
    APPLIED PHYSICS LETTERS, 1972, 20 (09) : 349 - &
  • [10] Mechanosynthesis of interstitial compounds
    Foct, J.
    Le Caer, G.
    Annales de Chimie: Science des Materiaux, 22 (06):