THE EFFECTS OF FREE-CARRIERS ON THE PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION-SPECTRA OF INGAAS-INP QUANTUM WELLS

被引：16
|
作者：
SAKER, MK
SKOLNICK, MS
CLAXTON, PA
ROBERTS, JS
KANE, MJ
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1988年 / 3卷 / 07期
关键词：
D O I：
10.1088/0268-1242/3/7/010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：691 / 700
页数：10
相关论文
共 50 条
  • [31] InGaAs/GaAs quantum wells: A standard photoluminescence system?
    Capizzi, M
    Martelli, F
    Polimeni, A
    ANNALES DE PHYSIQUE, 1995, 20 (03) : 183 - 189
  • [32] EXCITON MAGNETIC POLARON FEATURES IN PHOTOLUMINESCENCE EXCITATION-SPECTRA OF CDTE/(CDMN)TE QUANTUM-WELLS WITH HIGH MN CONTENTS
    MACKH, G
    OSSAU, W
    YAKOVLEV, DR
    LANDWEHR, G
    WOJTOWICZ, T
    KARCZEWSKI, G
    KOSSUT, J
    ACTA PHYSICA POLONICA A, 1995, 88 (05) : 849 - 852
  • [33] Optimization of growth of InGaAs/InP quantum wells using photoluminescence and secondary ion mass spectrometry
    Bhunia, S
    Banerji, P
    Chaudhuri, TK
    Haldar, AR
    Bose, DN
    Aparna, Y
    Chettri, MB
    Chakraborty, BR
    BULLETIN OF MATERIALS SCIENCE, 2000, 23 (03) : 207 - 209
  • [34] Optimization of growth of InGaAs/InP quantum wells using photoluminescence and secondary ion mass spectrometry
    S. Bhunia
    P. Banerji
    T. K. Chaudhuri
    A. R. Haldar
    D. N. Bose
    Y. Aparna
    M. B. Chettri
    B. R. Chakraborty
    Bulletin of Materials Science, 2000, 23 : 207 - 209
  • [35] TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENT OF CARRIER TRAPPING TIME OF INGAAS/INP QUANTUM WELLS
    WESTLAND, DJ
    MIHAILOVIC, D
    RYAN, JF
    SCOTT, MD
    SURFACE SCIENCE, 1988, 196 (1-3) : 399 - 403
  • [36] EXCITATION-SPECTRA OF PHOTOLUMINESCENCE BANDS IN CD1-XMNXTE
    AMBRAZEVICIUS, G
    BABONAS, G
    RUD, YV
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 125 (02): : 759 - 764
  • [37] DETERMINATION OF RECOMBINATION PARAMETERS OF SEMICONDUCTORS FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA
    PEKA, GP
    SPEKTOR, SA
    SHEPEL, LG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (10): : 1261 - 1263
  • [38] PHOTOLUMINESCENCE EXCITATION-SPECTRA OF GALLIUM NITRIDE SINGLE-CRYSTALS
    SULEYMANOV, Y
    PICHUGIN, IG
    TESLENKO, SI
    MARASINA, LA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (02): : K195 - K197
  • [39] Two-photon photoluminescence and excitation spectra of InGaN/GaN quantum wells
    Li, Q.
    Xu, S. J.
    Li, G. Q.
    Dai, D. C.
    Che, C. M.
    APPLIED PHYSICS LETTERS, 2006, 89 (01)
  • [40] EXCITATION-SPECTRA OF DONOR-ACCEPTOR PAIR PHOTOLUMINESCENCE IN ZNTE
    NAKASHIMA, S
    HATTORI, T
    YAMAGUCHI, Y
    SOLID STATE COMMUNICATIONS, 1978, 25 (02) : 137 - 139
12345