ELECTRONIC-PROPERTIES OF IN0.53GA0.47AS-INP SINGLE QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY

被引：7
|
作者：
FREI, M [1 ]
TSUI, DC [1 ]
TSANG, WT [1 ]
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 10期
关键词：
D O I：
10.1063/1.98095
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：606 / 608
页数：3
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