ELECTRONIC-PROPERTIES OF IN0.53GA0.47AS-INP SINGLE QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY

被引：7

作者：

FREI, M ^{[1
]}

TSUI, DC ^{[1
]}

TSANG, WT ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 10期

关键词：

D O I：

10.1063/1.98095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：606 / 608

页数：3

共 50 条

[1] SPECTROSCOPY OF EXCITED-STATES IN IN0.53GA0.47AS-INP SINGLE QUANTUM-WELLS GROWN BY CHEMICAL-BEAM EPITAXY
SAUER, R
HARRIS, TD
TSANG, WT
PHYSICAL REVIEW B, 1986, 34 (12): : 9023 - 9026
[2] SPECTROSCOPY OF EXCITED-STATES IN IN0.53GA0.47AS-INP SINGLE QUANTUM WELLS GROWN BY CHEMICAL-BEAM EPITAXY - COMMENT
CARDONA, M
CHRISTENSEN, NE
PHYSICAL REVIEW B, 1988, 37 (02): : 1011 - 1012
[3] CHEMICAL BEAM EPITAXY OF GA0.47IN0.53AS/INP QUANTUM-WELLS AND HETEROSTRUCTURE DEVICES
TSANG, WT
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 261 - 269
[4] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY
TSANG, WT
SCHUBERT, EF
APPLIED PHYSICS LETTERS, 1986, 49 (04) : 220 - 222
[5] BERYLLIUM DOPING FOR GA0.47IN0.53AS/INP QUANTUM-WELLS BY CHEMICAL BEAM EPITAXY (CBE)
UCHIDA, T
UCHIDA, T
YOKOUCHI, N
MIYAMOTO, T
KOYAMA, F
IGA, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7B): : L1224 - L1226
[6] OPTICAL-DETECTION OF INTERWELL-EXCITON TRANSFER IN IN0.53GA0.47AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY
SAUER, R
HARRIS, TD
TSANG, WT
APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1077 - 1079
[7] Beryllium doping for Ga0.47In0.53As/InP quantum wells by chemical beam epitaxy (CBE)
Uchida, Takashi
Uchida, Toshikazu
Yokouchi, Noriyuki
Miyamoto, Tomoyuki
Koyama, Fumio
Iga, Kenichi
Japanese Journal of Applied Physics, Part 2: Letters, 1991, 30 (7 B):
[8] PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
MARSH, JH
ROBERTS, JS
CLAXTON, PA
APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1161 - 1163
[9] INP/IN0.53GA0.47AS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY
CAMPBELL, JC
TSANG, WT
QUA, GJ
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) : 171 - 173
[10] RAMAN STUDIES OF INAS/IN0.53GA0.47AS SINGLE QUANTUM-WELLS GROWN ON INP SUBSTRATE BY MBE
QUAGLIANO, LG
SIMEONE, MG
BRUNI, MR
GAMBACORTI, N
ZUGARINI, M
SUPERLATTICES AND MICROSTRUCTURES, 1995, 17 (01) : 27 - 30

← 1 2 3 4 5 →