ION-IMPLANTATION FOR SEMICONDUCTOR-DEVICES

被引:0
|
作者
DUCHYNSKI, RJ [1 ]
机构
[1] WESTERN ELECT CO INC,DEPT COMPOUND MAT PREPARAT ENGN,READING,PA 19603
来源
WESTERN ELECTRIC ENGINEER | 1977年 / 21卷 / 02期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:59 / 66
页数:8
相关论文
共 50 条
  • [31] OPTOELECTRONICS SEMICONDUCTOR-DEVICES
    IGA, K
    [J]. DENKI KAGAKU, 1987, 55 (07): : 480 - 483
  • [32] WET SEMICONDUCTOR-DEVICES
    PETER, L
    [J]. NATURE, 1978, 273 (5663) : 490 - 491
  • [33] FERROELECTRICS FOR SEMICONDUCTOR-DEVICES
    SAYER, M
    WU, Z
    KUMAR, CVRV
    AMM, DT
    GRISWOLD, EM
    [J]. CANADIAN JOURNAL OF PHYSICS, 1992, 70 (10-11) : 1159 - 1170
  • [34] RELIABILITY OF SEMICONDUCTOR-DEVICES
    PECK, DS
    [J]. PROCEEDINGS OF THE IEEE, 1974, 62 (02) : 147 - 148
  • [35] SIMULATION OF SEMICONDUCTOR-DEVICES
    AKERS, LA
    [J]. SIMULATION, 1977, 29 (02) : 33 - 41
  • [36] EFFECTS OF FLUORINE ION-IMPLANTATION ON METAL-OXIDE-SEMICONDUCTOR DEVICES OF SILICON-ON-SAPPHIRE
    ZAIMA, S
    YASUDA, Y
    ITO, M
    NAKAMURA, T
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 459 - 461
  • [37] ION-IMPLANTATION IN III-V SEMICONDUCTOR TECHNOLOGY
    PEARTON, SJ
    [J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1993, 7 (28): : 4687 - 4761
  • [38] THE DEVELOPMENT OF ION-IMPLANTATION TECHNOLOGY IN THE UK SEMICONDUCTOR INDUSTRY
    DICKSON, KE
    [J]. PHYSICS IN TECHNOLOGY, 1985, 16 (04): : 171 - 176
  • [39] SEMICONDUCTOR COUNTERS FOR NUCLEAR RADIATIONS PRODUCED BY ION-IMPLANTATION
    PETERSTROM, S
    HOLMEN, G
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1974, 119 (01): : 151 - 155
  • [40] CONTROL OF MINORITY-CARRIER LIFETIME BY GOLD IMPLANTATION IN SEMICONDUCTOR-DEVICES
    COFFA, S
    CALCAGNO, L
    CAMPISANO, SU
    CALLERI, G
    FERLA, G
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (07) : 2073 - 2075