ONE-DIMENSIONAL MODELING FOR MAGNETOMICROWAVE PLASMA USING THE MONTE-CARLO METHOD

被引：9
|
作者：
IKEGAWA, M
KAKEHI, Y
KOBAYASHI, J
机构：
[1] HITACHI LTD,MECH ENGN RES LAB,DEPT 7,KUDAMATSU,YAMAGUCHI 744,JAPAN
[2] HITACHI LTD,CORP RES & DEV PROMOT OFF,CHIYODA KU,TOKYO 100,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 6B期
关键词：
PLASMA; MODEL; ECR; MONTE-CARLO METHOD; PARTICLE METHOD; MAGNET; MICROWAVE; ETCHING; SEMICONDUCTOR;
D O I：
10.1143/JJAP.31.2030
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This study discusses modeling of a magneto-microwave plasma used in semiconductor manufacturing equipment such as etching reactors and chemical vapor deposition (CVD) reactors. A one-dimensional simulation program for magneto-microwave plasma was developed. This combines a Monte Carlo particle plasma model and an electromagnetic wave damping model. With the use of this simulation, a plasma production mechanism with electron cyclotron resonance and electromagnetic wave damping in a partially ionized gas can be analyzed. Typical results of the effect of gas pressure on the plasma distribution in plasma processing equipment are presented.
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页码：2030 / 2034
页数：5
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