LARGE-AREA GROWTH OF ALGAAS/GAAS HETEROSTRUCTURES BY MOVPE FOR HEMT LSIS

We report on metalorganic vapor phase epitaxy (MOVPE) for high electron mobility transistor LSls. The low pressure barrel reactor can grow twelve 3-inch wafers at a time. The uniformity of layer thickness and donor concentration is better than +/- 1% over a 3-inch wafer. Wafer-to-wafer uniformity and run-to-run reproducibility are estimated to be +/- 1% for thickness and +/- 2% for donor concentration. The fabricated HEMT shows excellent characteristics. The transcontractance and K-value were 284 mS/mm and 478 mS/V/mm, respectively. We applied our MOVPE technique to HEMT LSls and confirmed full operation of logic circuits with 1Kb integration.