PHOTOLUMINESCENCE OF 3 INCH UNDOPED SI LEC GAAS ANNEALED BY VARIOUS PROCEDURES

被引：0
|
作者：
INOUE, T
MORI, M
KANO, G
YAMAMOTO, H
ODA, O
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1990年 / 112期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
3 inch LEC GaAs single crystals have been annealed by various ingot annealing (IA) and multiple wafer annealing (MWA) procedures. Macroscopic and microscopic distributions of photoluminescence (PL) intensity have been measured at 4.2 K. It was found that GaAs wafers subjected to MWA show the best uniformity. This fact implies PL uniformity is determined not only by native defects to be homogenized by annealing but also by the relaxation of lattice distortion.
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页码：219 / 224
页数：6
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