INFRARED-ABSORPTION OF OXYGEN-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY

被引：4
|
作者：
LINDSTROM, JL
SVENSSON, BG
NI, WX
WILLANDER, M
机构：
[1] ROYAL INST TECHNOL,S-16428 STOCKHOLM,SWEDEN
[2] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58111 LINKOPING,SWEDEN
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 117卷 / 02期
关键词：
D O I：
10.1002/pssa.2211170252
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K171 / K175
页数：5
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