ELECTRIC AND DIELECTRIC-PROPERTIES OF SOLUTION GAS INTERFACE GROWN THIN-FILMS OF AG2S

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作者
NIKAM, PS
PATHAN, KA
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O4 [物理学];
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0702 ;
摘要
Dielectric properties and current-voltage (I-V) characteristics of solution-gas interface formed Ag2S thin film capacitors (Al/Ag2S/Al) of various thicknesses have been studied in the frequency range 10(1)-10(6) Hz at various temperatures (300-443 K). I-V characteristics show space-charge-limited conduction. Capacitance (C) decreases with increasing thickness and frequency (f) and increases with increase of temperature. Loss factor (tan delta), showing pronounced minimum with frequency, increases with the rise of temperature and tan delta(min) shifts to a higher frequency. The large increase in C and dielectric constant epsilon towards the low f region indicates the possibility of an interfacial polarisation mechanism in the region.
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页码:324 / 327
页数:4
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