GROWTH OF CUBIC PHASE GALLIUM NITRIDE BY MODIFIED MOLECULAR-BEAM EPITAXY

被引:336
|
作者
PAISLEY, MJ
SITAR, Z
POSTHILL, JB
DAVIS, RF
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.575869
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:701 / 705
页数:5
相关论文
共 50 条
  • [31] GROWTH OF PLANAR DOPED BARRIER STRUCTURES IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY
    PALMATEER, SC
    MAKI, PA
    HOLLIS, MA
    EASTMAN, LF
    WARD, ID
    EVANS, C
    JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 321 - 322
  • [32] OBSERVATION OF CARBON INCORPORATION DURING GALLIUM-ARSENIDE GROWTH BY MOLECULAR-BEAM EPITAXY
    JOSEPH, DM
    BALAGOPAL, R
    HICKS, RF
    SADWICK, LP
    WANG, KL
    APPLIED PHYSICS LETTERS, 1988, 53 (22) : 2203 - 2204
  • [33] GROWTH OF GALLIUM NITRIDE BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY - THE ROLE OF CHARGED SPECIES
    MOLNAR, RJ
    MOUSTAKAS, TD
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (08) : 4587 - 4595
  • [34] OPERATION OF A COMPACT ELECTRON-CYCLOTRON-RESONANCE SOURCE FOR THE GROWTH OF GALLIUM NITRIDE BY MOLECULAR-BEAM EPITAXY (ECR-MBE)
    MOLNAR, RJ
    SINGH, R
    MOUSTAKAS, TD
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) : 275 - 281
  • [35] HETEROEPITAXIAL GROWTH OF CUBIC GAN ON GAAS BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    YOSHIDA, S
    OKUMURA, H
    MISAWA, S
    SAKUMA, E
    SURFACE SCIENCE, 1992, 267 (1-3) : 50 - 53
  • [36] Gallium arsenide crystalline nanorods grown by molecular-beam epitaxy
    Lee, HG
    Jeon, HC
    Kang, TW
    Kim, TW
    APPLIED PHYSICS LETTERS, 2001, 78 (21) : 3319 - 3321
  • [37] IRON DOPING IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY
    COVINGTON, DW
    COMAS, J
    YU, PW
    APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1094 - 1096
  • [38] Strain Dependence of Formation Mechanism of Growth Layer in Molecular Beam Epitaxy of Gallium Nitride
    Kobayashi, Yasunon
    Doi, Yusuke
    Nakatani, Akihiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (11)
  • [39] Ion-beam-assisted molecular-beam epitaxy:: a method to deposit gallium nitride films with high crystalline quality
    Sienz, S
    Gerlach, JW
    Höche, T
    Sidorenko, A
    Rauschenbach, B
    THIN SOLID FILMS, 2004, 458 (1-2) : 63 - 66
  • [40] Structural and magnetic properties of η-phase manganese nitride films grown by molecular-beam epitaxy
    Yang, HQ
    Al-Brithen, H
    Smith, AR
    Borchers, JA
    Cappelletti, RL
    Vaudin, MD
    APPLIED PHYSICS LETTERS, 2001, 78 (24) : 3860 - 3862